Quantum interference electron crystals break through the limits of silicon -based, and create a new era of electronic components
The core component of modern electronic products is the electrocarmioplasty. As the components continue to shrink, the process and effectiveness of traditional silicon -based crystals have gradually approached the limit. In order to break through this bottleneck, the international research team from the United Kingdom and Canada used the quantum interference effect to successfully develop single -molecular crystal prototypes. The new crystal tube not only has higher switching efficiency, but also has the advantages of low energy consumption and high reliability. It is expected to be applied to the next generation of electronic components.
The development of science and technology has continuously miniaturized electronic components, but traditional silicon -based electrical crystals will face many restrictions at nano -scale, such as quantum effects cause leakage current. Therefore, researchers are trying to seek a new type of switching mechanism and materials to overcome the bottleneck of silicon -based crystals. The research team adopts the principle of quantum interference to create a new single -molecular transistor design.
The core of this new type of transistor is a single zinc porphyrin molecule that places it between two graphene electrodes. Using the quantum interference effect, through the adjustment of the voltage, the electrons can control the constructive (on) or destructive (OFF) interference when passing through the vita to achieve accurate switch switching. Different from traditional silicon -based transistors, this quantum interference design can effectively eliminate the problem of leakage current.
Researchers have found that this single molecular crystal has a very high switch ratio, which can accurately switch the switch status. At the same time, it has excellent stability and reliability. Not damaged. In addition, the quantum interference effect also helps reduce the sub -threshold swing of the electrode, which improves the efficiency of the crystal.
Article Source: https://iknow.stpi.narl.org.tw/post/read.aspx? Postid = 20592
2025-01-03